Samsung MZ-V9S1T0

Tuote

Valmistaja

Samsung

Tuotenimi

MZ-V9S1T0

Julkaisupäivä

26.10.2024

Valmistajan linkki

https://www.samsung.com/uk/memory-storage/nvme-ssd/990-evo-plu..

Tuotekoodit

Valmistajan tuotekoodit

• MZ-V9S1T0BW
• MZ-V9S1T0BW.

GTIN- / EAN-koodit

• 0887276843704

Tuotekuvat

Features

SSD capacity

1000 GB

SSD form factor

M.2

Interface

PCI Express 4.0

NVMe

Kyllä

NVMe version

2.0

Memory type

V-NAND TLC

Component for

PC

Hardware encryption

Kyllä

Security algorithms

256-bit AES

M.2 SSD size

2280 (22 x 80 mm)

Read speed

7150 MB/s

Write speed

6300 MB/s

Random read (4KB)

850000 IOPS

Random write (4KB)

1350000 IOPS

DevSlp (device sleep) support

Kyllä

S.M.A.R.T. support

Kyllä

TRIM support

Kyllä

Mean time between failures (MTBF)

1500000 h

Power

Operating voltage

3.3 V

Power consumption (read)

4.3 W

Power consumption (write)

4.2 W

Average power consumption (read)

4.3 W

Average power consumption (write)

4.2 W

Power consumption (idle)

0.06 W

Power consumption DevSlp (device sleep)

5 mW

Weight & dimensions

Width

80.15 mm

Depth

2.38 mm

Height

80.15 mm

Weight

9 g

Packaging data

Package width

145 mm

Package depth

100 mm

Package height

24 mm

Package weight

68 g

Operational conditions

Operating temperature (T-T)

0 - 70 °C

Operating shock

1500 G